IRG4PC40UD IGBT - 600V UltraFast 8-60 kHz Copack IGBT

The IRG4BC40UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is d esigned to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. It is o ptimized for specific application conditions. The g eneration 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.

Features:-

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode

• Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-247AC package

Specification:-

Symbol	Parameter	Values	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25°C	Continuous Collector Current	40	A
IC @ TC = 100°C	Continuous Collector Current	20
ICM	Pulsed Collector Current	160
ILM	Clamped Inductive Load Current	160
IF @ TC = 100°C	Diode Continuous Forward Current	15
IFM	Diode Maximum Forward Current	160
VGE	Gate-to-Emitter Voltage	± 20	V
PD @ TC = 25°C	Maximum Power Dissipation	160	W
PD @ TC = 100°C		65
TJ	Operating Junction and	-55 to +150	°C
Tstg	Storage Temperature Range
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw.	10 lbf•in (1.1 N•m)

Related Document:-

IRG4BC40UD IGBT Data Sheet