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IRG4PC40UD IGBT - 600V UltraFast 8-60 kHz Copack IGBT

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Brand: Generic   |   SKU: 3759592

344.00

₹ 508.00

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Description

The IRG4BC40UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is d esigned to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. It is o ptimized for specific application conditions. The g eneration 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.

Features:-

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode

• Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-247AC package

Specification:-

Symbol Parameter Values Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 40 A
IC @ TC = 100°C Continuous Collector Current 20
ICM Pulsed Collector Current 160
ILM Clamped Inductive Load Current 160
IF @ TC = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 160
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C 65
TJ Operating Junction and -55 to +150 °C
Tstg Storage Temperature Range

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)


Related Document:-

IRG4BC40UD IGBT Data Sheet

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