IRG4BC30UD IGBT - 600V UltraFast 8-60 kHz Copack IGBT

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Brand: Generic | SKU: 9607357

₹ 306.00

~~₹ 470.00~~

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Description

The IRG4BC30UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is d esigned to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. It is o ptimized for specific application conditions. The g eneration 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.

Features:-

â€¢ UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode

â€¢ Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3

â€¢ IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations

â€¢ Industry standard TO-220AB package

Specification:-

Symbol	Parameter	Values	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25Â°C	Continuous Collector Current	13	A
IC @ TC = 100Â°C	Continuous Collector Current	6.5
ICM	Pulsed Collector Current	52
ILM	Clamped Inductive Load Current	52
IF @ TC = 100Â°C	Diode Continuous Forward Current	7
IFM	Diode Maximum Forward Current	52
VGE	Gate-to-Emitter Voltage	Â± 20	V
PD @ TC = 25Â°C	Maximum Power Dissipation	60	W
PD @ TC = 100Â°C	Maximum Power Dissipation	24	W
TJ	Operating Junction and	-55 to +150	Â°C
Tstg	Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw.	10 lbfâ€¢in (1.1 Nâ€¢m)