HGTG11N120CND IGBT - 1200V 43A N-Channel IGBT

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features:-

• 43A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time 340ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

Specification:-

Symbol	Parameter	Ratings	Units
BVCES	Collector to Emitter Voltage	1200	V
IC25	Collector Current Continuous		A
	At TC = 25°C	43
IC110	At TC = 100°C	22
ICM	Collector Current Pulsed	80	A
VGES	Gate to Emitter Voltage Continuous	±20	V
VGEM	Gate to Emitter Voltage Pulsed	±30	V
SSOA	Switching Safe Operating Area at TJ = 150°C	55A at 1200V
PD	Power Dissipation Total at TC = 25°C	298	W
	Power Dissipation  TC > 25°C	2.38	W/°C
TJ,Tstg	Operating and Storage Junction Temperature Range	-55 to 150	°C
TL	Maximum Lead Temperature for Soldering	260	°C
tsc	Short Circuit Withstand Time at VGE = 15V	8	µs
tsc	Short Circuit Withstand Time at VGE = 12V	15	µs

Related Document :-

HGTG11N120CND IGBT Data Sheet