CT60AM-18F IGBT - 900V 60A High Voltage Current IGBT

The CT60AM-18F is an Insulated Gate Bipolar Transistor which is a simple drive and has VCES of 900V,  IC of 60A and Integrated fast-recovery diode. The CT60AM-18F has a low VCE Saturation Voltage and small tail loss.

Applications:-

• Microwave oven

• Electromagnetic cooking devices

• Rice-cookers

• Voltage-resonant inverter circuit electric appliances

Specifications:-

Symbol	Parameter	Ratings	Units
VCES	Collector-Emitter Voltage	900	V
VGES	Gate-Emitter Voltage	±25	V
VGEM	Peak Gate-Emitter Voltage	±30	V
IC	Collector Current	60	A
ICM	Collector Current (Pulse)	120	A
IE	Emitter Current	40	A
PC	Maximum Power Dissipation	180	W
Tj	Junction Temperature	–40 ~ +150	°C
Tstg	Storage Temperature	–40 ~ +150	°C

Related Document:-

CT60AM-18F IGBT Data Sheet