G60N100BNTD IGBT - 1000V 60A N-Channel IGBT

The G60N100B2TD is a  1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Applications :-

• UPS, Welder

Features:-

• High Speed Switching

• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A

• High Input Impedance

• Built-in Fast Recovery Diode

Specification:-

Symbol	Parameter	Ratings	Units
VCES	Collector-emitter voltage	1000	V
VGES	DC collector curren	±25	V
IC	Collector Current @ TC = 25°C	60	A
	Collector Current @ TC = 100°C	42
ICM	Pulsed Collector Current	200	A
IF	Diode Continuous Forward Current @ TC =100°C	15	A
PD	Maximum Power Dissipation @ TC = 25°C	180	W
	Maximum Power Dissipation @ TC = 100°C	72
TJ	Operating Junction Temperature	-55 to +150	°C
Tstg	Storage Temperature Range	-55 to +150	°C
TL	Maximum Lead Temp. for Soldering Purposes	300	°C

Related Document :-

G60N100BNTD IGBT Data Sheet