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MITSUBISHI PM30RSF060 IGBT
In Stock
Brand: Generic | SKU: 5270516
₹ 2,229.00
₹ 2,889.00
Tax Included and Shipping Rate Calculated at Checkout
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Offer & Other Details
- Payment Offer: 2% Instant Discount on UPI and bank Transfer Payments.
- Partial COD: Pay 25% Advance now and Balance on Delivery (COD).
- Sales Assistance: Contact us +91 8903831010 for personalized advice.
Description
Description
The PM30RSF060 is a high-power IGBT (Insulated Gate Bipolar Transistor) module from Mitsubishi Electric. It features an original design for efficient power switching, combining low saturation voltage and high-speed switching. Ideal for industrial applications, it ensures reliable performance and high thermal efficiency, suitable for motor drives and inverters.
Specifications:
- Collector-Emitter Voltage (Vce) : 600V
- Collector Current (Ic) : 30A
- Power Dissipation (Ptot) : 130W
- Gate-Emitter Voltage (Vge) : ±20V
- Collector-Emitter Saturation Voltage (Vce(sat)) : 2.5V (typical)
- Isolation Voltage : 2500V AC (for 1 minute)
- Operating Temperature Range : -20°C to +150°C
- Storage Temperature Range : -40°C to +150°C
- Package : High-power module package
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