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- G160N60 IGBT - 600V 50A Ultra-Fast IGBT
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G160N60 IGBT - 600V 50A Ultra-Fast IGBT
Brand: Generic | SKU: 3043688
₹ 686.00
₹ 1,292.00
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Description
The G160N60 of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Applications:-
• AC & DC motor controls
• General purpose inverters
• Robotics, servo controls
• Power supplies.
Features:-
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A
• High input impedance
• CO-PAK, IGBT with FRD: trr = 75nS (typ.)
Specification:-
| Symbol | Parameter | Ratings | Units |
| VCES | Collector-emitter voltage | 600 | V |
| VGES | DC collector curren |
±20
|
V |
| IC | Collector Current @ TC = 25°C | 160 | A |
| Collector Current @ TC = 100°C | 80 | ||
| ICM | Pulsed Collector Current | 300 | A |
| IF | Diode Continuous Forward Current @ TC =100°C | 25 | A |
| IFM | Diode Maximum Forward Current | 280 | A |
| PD | Maximum Power Dissipation @ TC = 25°C | 250 | W |
| Maximum Power Dissipation @ TC = 100°C | 100 | ||
| TJ | Operating Junction Temperature | -55 to +150 | °C |
| Tstg | Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes | 300 | °C |
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