K200A06 IGBT

The K200A06 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. It features a voltage rating of 600V and a current rating of 200A, making it suitable for various industrial and power electronics applications. The "ORG RU" designation may refer to its manufacturer or specific model variant.

Specifications:

• Voltage Rating: 600V
• Current Rating: 200A
• Package Type: TO-247 or similar
• Gate-Emitter Voltage (VGE): Typically around ±20V
• Maximum Junction Temperature (Tj): Usually around 150°C
• Switching Frequency: Depends on application, often in the kHz range
• On-State Voltage Drop (VCEsat): Typically a few volts at rated current
• Gate Charge: Specified in nanocoulombs (nC)
• Reverse Recovery Charge: Specified in nanocoulombs (nC)
• Safe Operating Area (SOA): Graphical representation of current and voltage limits for safe operation