IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package

IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC

Detailed Specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Drain-Source Breakdown Voltage (Vds)	100V
Continuous Drain Current (Id)	33A
Drain-Source Resistance (Rds On)	44mOhms
Gate-Source Voltage (Vgs)	20V
Gate Charge (Qg)	71 nC
Operating Temperature Range	-55 - 175°C
Power Dissipation (Pd)	130W

Related Documents

IRF540 MOSFET Datasheet