IRFZ44N MOSFET - 55V 49A N-Channel Power MOSFET TO-220 Package

IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced Process Technology

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

Detailed Specifications:-

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Drain-Source Breakdown Voltage (Vds)	55V
Continuous Drain Current (Id)	49A
Drain-Source Resistance (Rds On)	0.0175Ohms
Gate-Source Voltage (Vgs)	20V
Gate Charge (Qg)	63 nC
Operating Temperature Range	-55 - 175°C
Power Dissipation (Pd)	94W

Related Documents

IRFZ44N MOSFET Datasheet