FNB41560B2 IGBT

The FNB41560B2 is a high-power insulated gate bipolar transistor (IGBT) designed for applications requiring efficient switching and power control. With a voltage rating of 600V and a current rating of 415A, it offers robust performance for industrial and automotive applications, making it a reliable choice for power electronics systems.

Specifications:

• Voltage Rating: 600V
• Current Rating: 415A
• Package Type: TO-247
• Maximum Operating Temperature: typically up to 150°C
• Gate-Emitter Voltage (VGE): typically around ±20V
• Collector-Emitter Saturation Voltage (VCEsat): typically around 1.7V at 25°C, 2.3V at 125°C
• On-State Voltage (VCE(on)): typically around 1.4V at 25°C, 1.9V at 125°C
• Thermal Resistance: typically around 0.42°C/W junction-to-case
• Switching Frequency: depends on application and circuit design, typically from several kHz to MHz.