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ESM3045DV IGBT DIODE
In Stock
Brand: Generic | SKU: 2499337
₹ 2,021.00
₹ 2,354.00
Tax Included and Shipping Rate Calculated at Checkout
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Description
Description
The ESM3045DV is an Insulated Gate Bipolar Transistor (IGBT) with a diode. It is designed for high efficiency and fast switching in power electronics. It combines the high-speed switching of a MOSFET with the low on-state conduction losses of a bipolar transistor, making it ideal for applications like inverters and motor drives.
Specifications:
- Collector-Emitter Voltage (V_CE) : 600V
- Collector Current (I_C) : 45A
- Gate-Emitter Voltage (V_GE) : ±20V
- Collector Dissipation (P_C) : 190W
- Junction Temperature (T_J) : -55°C to 150°C
- Reverse Recovery Time (t_rr) : Fast recovery diode
- Threshold Voltage (V_GE(th)) : 4.5V to 6.5V
- Total Gate Charge (Q_g) : 220nC
- Package Type : TO-247
- Switching Frequency : High-frequency operations suitable
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