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E47N50 IGBT DIODE
In Stock
Brand: Generic | SKU: 4773117
₹ 2,021.00
₹ 2,354.00
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Description
Description
The E47N50 is a high-power Insulated Gate Bipolar Transistor (IGBT) with a built-in diode. It is designed for fast switching applications and offers high efficiency. This IGBT features a voltage rating of 500V and a current rating of 47A, making it suitable for use in power electronics and motor drives.
Specifications:
- Collector-Emitter Voltage (Vce) : 500V
- Collector Current (Ic) : 47A
- Gate-Emitter Voltage (Vge) : ±20V
- Collector Dissipation (Pc) : 250W
- Maximum Junction Temperature (Tj) : 150°C
- Threshold Voltage (Vge(th)) : 4.5V - 7.5V
- Collector-Emitter Saturation Voltage (Vce(sat)) : 2.7V at Ic = 47A
- Rise Time (tr) : 40ns
- Fall Time (tf) : 100ns
- Package Type : TO-247
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