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E38NA50 IGBT DIODE
In Stock
Brand: Generic | SKU: 8690969
₹ 2,021.00
₹ 2,354.00
Tax Included and Shipping Rate Calculated at Checkout
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Offer & Other Details
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- Partial COD: Pay 25% Advance now and Balance on Delivery (COD).
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Description
Description
The E38NA50 is an IGBT (Insulated Gate Bipolar Transistor) with an integrated diode designed for high-power applications. It combines the low conduction losses of a bipolar transistor with the high switching speed of a MOSFET. This makes it suitable for use in inverters, motor drives, and power supplies.
Specifications:
- Collector-Emitter Voltage (Vces): 500V
- Continuous Collector Current (Ic): 40A
- Gate-Emitter Voltage (Vge): ±20V
- Power Dissipation (Pd): 160W
- Collector-Emitter Saturation Voltage (Vce(sat)): 2.7V
- Turn-On Delay Time (td(on)): 50ns
- Turn-Off Delay Time (td(off)): 450ns
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-3P
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