E36N50A IGBT DIODE

The E36N50A is an Insulated Gate Bipolar Transistor (IGBT) with an integrated diode. It is designed for high power applications, offering a low voltage drop and high current capability. This device is commonly used in motor control, power supply units, and industrial automation systems due to its efficient switching characteristics and robustness.

Specifications:

• Voltage Rating: Typically rated for around 500 volts.
• Current Rating: Capable of handling currents up to 36 amperes.
• Switching Speed: Fast switching speed for efficient operation in power electronics applications.
• Package Type: Usually comes in a TO-247 or similar package for easy mounting on heat sinks.
• Diode Type: Integrated freewheeling diode for improved performance in motor control and similar applications.
• Temperature Range: Operates reliably over a wide temperature range, typically from -40°C to 150°C.
• Gate Drive Voltage: Requires a specified gate drive voltage for proper operation, often around 15 volts.
• Reverse Recovery Time: Low reverse recovery time for reduced switching losses and improved efficiency.
• Applications: Suitable for use in motor drives, power converters, industrial automation, and similar high-power electronic systems.