4N35 IC - Optocoupler Phototransistor IC

The 4N35 optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. The couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage.

This isolation performance is accomplished through  double molding isolation manufacturing process. Comliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1.

These isolation processes and the  ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

Features:-

• Isolation Test Voltage 5300 VRMS

• Interfaces with common logic families

• Input-output coupling capacitance < 0.5 pF

• Industry Standard Dual-in line 6-pin package

Agency Approvals:-

• Underwriters Laboratory File #E52744

• DIN EN 60747-5-2(VDE0884)

DIN EN 60747-5-5 pending

Available with Option 1

Applications:-

• AC mains detection

• Reed relay driving

• Switch mode power supply feedback

• Telephone ring detection

• Logic ground isolation

• Logic coupling with high frequency noise rejection

Specification:-

Symbol	Parameter	Value	Unit
VR	Reverse voltage	6	V
IF	Forward current	60	mA
IFSM	Surge current	2.5	A
Pdiss	Power dissipation	100	mW
VCEO	Collector-emitter breakdown voltage	70	V
VEBO	Emitter-base breakdown voltage	7	V
IC	Collector current	100	mA

Related Document:-

4N35 IC Data Sheet