WML11N65C2 Super Junction Power MOSFET

WML11N65C2 Super Junction Power MOSFET In the N layer of J-MOS, there is a P layer that is fashioned like a pillar. Alternating layers of P and N are aligned.  Applying VDS causes the depletion layer to spread in the N-layer, but in SJ-MOS it does so differently than in regular D-MOS. (See illustrations of electric field intensity. The strength of the electric field reflects the condition of the depletion layer.)  When it comes to D-MOS, the P/N layer contact has the strongest electric field intensity. Break-over phenomena (also known as breakdown phenomenon) occurs when the electric field intensity exceeds the limit of silicon, and this is the voltage limit. The electric field intensity in the N-layer is uniform for SJ-MOS, in contrast. As a result, an N- layer with lower resistance can be created for SJ-MOS, realizing. Its used in PC, Charger, LED TV, LCD TV Etc.

Features

Its drain to source voltage is 700V

Its used for power switching

It has lead free and halogen free construction

Low leakage current

It has the capability to improved dv/dT