MMBT5551 NPN High Voltage transistor comes in Surface-Mounted Device SMD SOT-23 plastic package.
Specifications:-
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Product Category: Bipolar Transistors - BJT
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Mounting Style: SMD/SMT
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Package/Case: SOT-23-3
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Transistor Polarity: NPN
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Configuration: Single
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Collector- Emitter Voltage VCEO Max: 160 V
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Collector- Base Voltage VCBO: 180 V
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Emitter- Base Voltage VEBO: 6 V
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Maximum DC Collector Current: 0.6 A
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Gain Bandwidth Product fT: 300 MHz
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Maximum Operating Temperature: + 150 C
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Series: MMBT5551
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Continuous Collector Current: 0.6 A
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DC Collector/Base Gain hFE Min: 80 at 1 mA at 5 V, 80 at 10 mA at 5 V, 30 at 50 mA at 5 V
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Minimum Operating Temperature: - 55 C
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Pd - Power Dissipation: 300 mW