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2SK2611 MOSFET - 900V 9A N-Channel Power MOSFET TO-3PN Package

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Brand: Generic   |   SKU: 4741413

131.00

₹ 184.00

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Description

K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.


Features:-

• 9A,900V, RDS(on)(Max1.1Ω)@VGS=10V

• Ultra-low Gate charge(Typical 58nC)

• Fast Switching Capability

• 100%Avalanche Tested

• Maximum Junction Temperature Range(150℃)


Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 900V
Continuous Drain Current (Id) 9A
Drain-Source Resistance (Rds On) 1.1Ohms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg)
58 nC
Operating Temperature Range -55 - 150°C
Power Dissipation (Pd) 150W


Related Documents:-

2SK2611 MOSFET Datasheet

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