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- 1N5822 Schottky Barrier Diode
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1N5822 Schottky Barrier Diode
Brand: Generic | SKU: 8024579
₹ 15.00
₹ 22.00
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Description
The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:-
• Extremely Low VF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
• Shipped in plastic bags, 500 per bag
• Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to the part number
• Pb-Free Packages are Available
Mechanical Characteristics:-
• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: Cathode indicated by Polarity Band
Specification:-
| Symbol | Parameter | Value | Units |
| VRRM | Peak Repetitive Reverse Voltage | 40 | V |
| VRWM | Working Peak Reverse Voltage | 40 | V |
| VR | DC Blocking Voltage | 40 | V |
| VR(RMS) | RMS Reverse Voltage | 28 | V |
| VRSM | Non−Repetitive Peak Reverse Voltage | 48 | V |
| IO | Average Rectified Output Current | 3 | A |
| IFSM | Non-Repetitive Peak Forward Surge Current | 80 | A |
| TJ | Operating Junction Temperature Range | − 65 to +125 | °C |
| Tstg | Storage Temperature Range | − 65 to +125 | °C |
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